DMBT5087 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for low noise, high gain, general purpose amplifier applications. pinning 1 = base 2 = emitter 3 = collector .091(2.30).067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 characteristic symbol rating unit collector-base voltage vcbo -50 v collector-emitter voltage vceo -50 v emitter-base voltage vebo -3 v collector current ic -50 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -50 - - v ic=-100ma collector-emitter breakdown voltage bvceo -50 - - v ic=-1ma emitter-base breakdown volatge bvebo -3 - - v ie=-10ma collector cutoff current icbo1 - - -10 na vcb =-10v icbo2 - - -50 na vcb =-35v collector-emitter saturation voltage (1) vce(sat) - - -0.3 v ic=-10ma, ib=-1ma base-emitter saturation voltage (1) vbe(sat) - - -0.85 v ic=-10ma, ib=-1ma hfe1 250 - 800 - ic=-0.1ma, vce=-5v dc current gain(1) hfe2 250 - - - ic=-1ma, vce=-5v hfe3 250 - - - ic=-10ma, vce=-5v transition frequency ft 40 - - mhz ic=-0.5ma, vce =-5v, f=100mhz output capacitance cob - - 4 pf vcb =-5v, f=100mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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